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1

Defect-induced polytype transformations in LPE grown SiC epilayers on (1 1 1) 3C-SiC seeds grown by VLS on 6H-SiC

Maya Marinova, Georgios Zoulis, Teddy Robert, Frederic Mercier, Alkioni Mantzari, Irina Galben, Olivier Kim-Hak, Jean Lorenzzi, Sandrine Juillaguet, Didier Chaussende, Gabriel Ferro, Jean Camassel, Ef

Journal:

Physica B: Condensed Matter

Year:

2009

Language:

english

File:

PDF, 389 KB

english, 2009

2

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

Contreras, Sylvie, Konczewicz, Leszek, Kwasnicki, Pawel, Arvinte, Roxana, Peyre, Herve, Chassagne, Thierry, Zielinski, Marcin, Kayambaki, Maria, Juillaguet, Sandrine, Zekentes, Konstantinos

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 961 KB

english, 2016

3

Electrical transport properties of p-type 4H-SiC

Contreras, Sylvie, Konczewicz, Leszek, Arvinte, Roxana, Peyre, Hervé, Chassagne, Thierry, Zielinski, Marcin, Juillaguet, Sandrine

Journal:

physica status solidi (a)

Year:

2017

Language:

english

File:

PDF, 1.79 MB

english, 2017

4

Prospects for 3C-SiC bulk crystal growth

D. Chaussende, F. Mercier, A. Boulle, F. Conchon, M. Soueidan, G. Ferro, A. Mantzari, A. Andreadou, E.K. Polychroniadis, C. Balloud, S. Juillaguet, J. Camassel, M. Pons

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 888 KB

english, 2008

5

Effect of initial substrate conditions on growth of cubic silicon carbide

R. Vasiliauskas, M. Marinova, M. Syväjärvi, R. Liljedahl, G. Zoulis, J. Lorenzzi, G. Ferro, S. Juillaguet, J. Camassel, E.K. Polychroniadis, R. Yakimova

Journal:

Journal of Crystal Growth

Year:

2011

Language:

english

File:

PDF, 1.38 MB

english, 2011

6

Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium

J.W. Sun, V. Jokubavicius, R. Liljedahl, R. Yakimova, S. Juillaguet, J. Camassel, S. Kamiyama, M. Syväjärvi

Journal:

Thin Solid Films

Year:

2012

Language:

english

File:

PDF, 482 KB

english, 2012

7

grown on Ge(001)

Stoehr, M., Aubel, D., Juillaguet, S., Bischoff, J. L., Kubler, L., Bolmont, D., Hamdani, F., Fraisse, B., Fourcade, R.

Journal:

Physical Review B

Year:

1996

Language:

english

File:

PDF, 95 KB

english, 1996

8

Experimental Investigation of 4H-SiC Bulk Crystal Growth

Chourou, K., Anikin, Mikhail, Bluet, Jean Marie, Lauer, V., Guillot, Gérard, Camassel, Jean, Juillaguet, Sandrine, Chaix-Pluchery, O., Pons, Michel, Pons, R.

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 371 KB

1998

9

Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

Contreras, Sylvie, Zielinski, Marcin, Konczewicz, Leszek, Blanc, Caroline, Juillaguet, Sandrine, Müller, Ralf, Künecke, Ulrike, Wellmann, Peter J., Camassel, Jean

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 774 KB

english, 2006

10

AIP Conference Proceedings [AIP 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗ - Strasbourg, (France) (8–10 October 2010)] - Effects of Growth Conditions on the Low Temperature Photoluminescence Spectra of (111) 3C-SiC Layers Grown by Chemical Vapor Deposition on 3C-SiC Seeds grown by the Vapor-Liquid-Solid Technique

Zoulis, G., Sun, J. W., Jegenyes, N., Lorenzzi, J. C., Juillaguet, S., Soulière, V., Ferro, G., Camassel, J., Ferro, Gabriel, Siffert, Paul

Year:

2010

Language:

english

File:

PDF, 207 KB

english, 2010

11

Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC

Tsavdaris, Nikolaos, Kwasnicki, Pawel, Ariyawong, Kanaparin, Valle, Nathalie, Peyre, Herve, Sarigiannidou, Eirini, Juillaguet, Sandrine, Chaussende, Didier

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 547 KB

english, 2015

12

Optical Properties of As-Grown, α-Particle Irradiated and N+2-Ion Implanted GaN

H.W. Kunert, S. Juillaguet, J. J. Camassel, J.B. Malherbe, R.Q. Odendaal, D.J. Brink, L.C. Prinsloo

Journal:

physica status solidi (b)

Year:

1999

Language:

english

File:

PDF, 159 KB

english, 1999

13

Application of LTPL Investigation Methods to CVD-Grown SiC

J. Camassel, S. Juillaguet, M. Zielinski, C. Balloud

Journal:

Chemical Vapor Deposition

Year:

2006

Language:

english

File:

PDF, 857 KB

english, 2006

14

Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence

J. Camassel, J.P. Laurenti, S. Juillaguet, F. Reinhardt, K. Wolter, H. Kurz, D. Grützmacher

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 368 KB

english, 1991

15

Optical characterization of strained InGaAs/InP quantum well structures

K. Wolter, R. Schwedler, B. Gallmann, Ch. Jaekel, M. Stollenwerk, J. Camassel, J.P. Laurenti, S. Juillaguet

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 192 KB

english, 1991

16

Interface properties of strained InGaAs/InP quantum wells grown by LP-MOVPE

R. Schwedler, B. Gallman, K. Wolter, A. Kohl, K. Leo, H. Kurz, S. Juillaguet, J. Camassel, J.P. Laurenti, F.H. Baumann

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 216 KB

english, 1992

17

Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence

R. Schwedler, B. Gallmann, K. Wolter, A. Kohl, K. Leo, H. Kurz, S. Juillaguet, E. Massone, J. Camassel, J.P. Laurenti, F.H. Baumann

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 217 KB

english, 1993

18

Optical tools for intermixing diagnostic: application to InGaAs/InGaAsP microstructures

H. Peyre, F. Alsina, S. Juillaguet, E. Massone, J. Camassel, J. Pascual, R.W. Glew

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 261 KB

english, 1993

19

Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment

I Halidou, Z Benzarti, T Boufaden, B El Jani, S Juillaguet, M Ramonda

Journal:

Materials Science and Engineering: B

Year:

2004

Language:

english

File:

PDF, 188 KB

english, 2004

20

Growth and characterization of In0.53Ga0.47As/InxGa1−xAs strained-layer superlattices

A. Kohl, S. Juillaguet, B. Fraisse, R. Schwedler, F. Royo, H. Peyre, F. Bruggeman, K. Wolter, K. Leo, H. Kurz, J. Camassel

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 408 KB

english, 1993

21

Evidence for non-uniform interface thickness in strained InGaAs/InP quantum wells

J. Camassel, K. Wolter, S. Juillaguet, R. Schwedler, E. Massone, B. Gallmann, J.P. Laurenti

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 438 KB

english, 1993

22

Non-destructive approaches to interdiffusion phenomena across GaInAs/GaInAsP interfaces: photoluminescence vs. Raman

H. Peyre, F. Alsina, S. Juillaguet, E. Massone, J. Camassel, J. Pascual, R.W. Glew

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 293 KB

english, 1993

23

Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique

R. Al Asmar, S. Juillaguet, M. Ramonda, A. Giani, P. Combette, A. Khoury, A. Foucaran

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 543 KB

english, 2005

24

Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor

M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 557 KB

english, 2008

25

Photoluminescence investigation of a degenerate two-dimensional electron gas in GaN/AlGaN heterojunction

A. Raymond, S. Juillaguet, B. Couzinet, I.El. Mezouar, A. Kamal-Saadi, M. Asif Khan, Q. Chen, J.W. Yang

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 409 KB

english, 1997

26

Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition

F Namavar, P.C Colter, N Planes, B Fraisse, J Pernot, S Juillaguet, J Camassel

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 474 KB

english, 1999

27

Optical investigation of residual doping species in 6H and 4H-SIC layers grown by chemical vapor deposition

E Neyret, G Ferro, S Juillaguet, J.M Bluet, C Jaussaud, J Camassel

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 202 KB

english, 1999

28

Optical assessment of purity improvement effects in bulk 6H and 4H-SiC wafers grown by physical vapor transport

J Camassel, S Juillaguet, N Planes, A Raymond, P Grosse, G Basset, C Faure, M Couchaud, J.M Bluet, K Chourou, M Anikin, R Madar

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 202 KB

english, 1999

29

Effect of SiN treatment on GaN epilayer quality

Z. Benzarti, I. Halidou, T. Boufaden, B. El Jani, S. Juillaguet, M. Ramonda

Journal:

physica status solidi (a)

Year:

2004

Language:

english

File:

PDF, 429 KB

english, 2004

30

Optical properties of GaN grown on porous silicon substrate

T. Boufaden, A. Matoussi, S. Guermazi, S. Juillaguet, A. Toureille, Y. Mlik, B. El Jani

Journal:

physica status solidi (a)

Year:

2004

Language:

english

File:

PDF, 143 KB

english, 2004

31

Control of 3C–SiC/Si wafer bending by the “checker-board” carbonization method

T. Chassagne, G. Ferro, H. Haas, H. Mank, A. Leycuras, Y. Monteil, F. Soares, C. Balloud, Ph. Arcade, C. Blanc, H. Peyre, S. Juillaguet, J. Camassel

Journal:

physica status solidi (a)

Year:

2005

Language:

english

File:

PDF, 506 KB

english, 2005

32

Control of epitaxial layers grown on 4H–SiC: from 3C microcrystalline inclusions to type II quantum well structures

S. Juillaguet, C. Balloud, V. Soulière, C. Sartel, J. Camassel, Y. Monteil

Journal:

physica status solidi (a)

Year:

2005

Language:

english

File:

PDF, 141 KB

english, 2005

33

Technical aspects of 〈〉 4H–SiC MOSFET processing

C. Blanc, D. Tournier, V. Soulière, S. Juillaguet, S. Contreras, M. Zielinski, P. Godignon, Y. Monteil, Jean Camassel

Journal:

physica status solidi (a)

Year:

2005

Language:

english

File:

PDF, 192 KB

english, 2005

34

Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions

M. Zielinski, S. Ndiaye, T. Chassagne, S. Juillaguet, R. Lewandowska, M. Portail, A. Leycuras, J. Camassel

Journal:

physica status solidi (a)

Year:

2007

Language:

english

File:

PDF, 345 KB

english, 2007

35

Cathodoluminescence investigation of stacking faults extension in 4H-SiC

S. Juillaguet, M. Albrecht, J. Camassel, T. Chassagne

Journal:

physica status solidi (a)

Year:

2007

Language:

english

File:

PDF, 333 KB

english, 2007

36

Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition

Maya Marinova, Teddy Robert, Sandrine Juillaguet, Ioannis Tsiaoussis, Nikolaos Frangis, Efstathios Polychroniadis, Jean Camassel, Thierry Chassagne

Journal:

physica status solidi (a)

Year:

2009

Language:

english

File:

PDF, 17.06 MB

english, 2009

37

Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots

S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Taliercio, T. Guillet, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies

Journal:

physica status solidi (b)

Year:

2004

Language:

english

File:

PDF, 822 KB

english, 2004

38

Optical properties of as-grown and process-induced stacking faults in 4H-SiC

J. Camassel, S. Juillaguet

Journal:

physica status solidi (b)

Year:

2008

Language:

english

File:

PDF, 1.78 MB

english, 2008

39

Optical properties of GaN/AlN quantum boxes under high photo-excitation

S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Taliercio, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, J. Massies

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 283 KB

english, 2003

40

Optical properties of Ga2O3 doped ZnO nanoribbons

M. Stoehr, S. Juillaguet, T. M. Kyaw, J. G. Wen

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 109 KB

english, 2005

41

Photoluminescence, cathodo-luminescence and micro-Raman spectroscopy of as-grown stacking faults in 4H-SiC

S. Juillaguet, M. Albrecht, R. Lewandowska, J. Camassel, T. Chassagne

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 495 KB

english, 2007

42

Doping effect on the optical properties of ZnO nanostructures

M. Stoehr, S. Juillaguet, T. M. Kyaw, J. G. Wen

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 440 KB

english, 2007

43

Optical investigation of stacking faults in 4H–SiC epitaxial layers: Comparison of 3C and 8H polytypes

S. Juillaguet, T. Robert, J. Camassel

Journal:

Materials Science and Engineering: B

Year:

2009

Language:

english

File:

PDF, 188 KB

english, 2009

44

Splitting of type-I (N-B, P-Al) and type-II (N-Al, N-Ga) donor-acceptor pair spectra in 3C-SiC

Sun, J., Ivanov, I., Juillaguet, S., Camassel, J.

Journal:

Physical Review B

Year:

2011

Language:

english

File:

PDF, 308 KB

english, 2011

45

Investigation of residual impurity content in GaAs layers grown by VPE under very low pressure conditions

J. Camassel, J. P. Laurenti, S. Juillaguet, K. Wolter, M. Deschler, S. Ambross, K. Grüter

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 1.19 MB

english, 1991

46

Comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars and the seeding layer grown on 4H-SiC

J.W. Sun, V. Khranovskyy, M. Mexis, M. Eriksson, M. Syväjärvi, I. Tsiaoussis, G.R. Yazdi, H. Peyre, S. Juillaguet, J. Camassel, P.O. Holtz, P. Bergman, L. Hultman, R. Yakimova

Journal:

Journal of Luminescence

Year:

2012

Language:

english

File:

PDF, 1.49 MB

english, 2012

47

Strong element dependence of C 1s and Si 2p X-ray photoelectron diffraction profiles for identical C and Si local geometries in β-SiC

S. Juillaguet, L. Kubler, M. Diani, J.L. Bischoff, G. Gewinner, P. Wetzel, N. Bécourt

Journal:

Surface Science

Year:

1995

Language:

english

File:

PDF, 697 KB

english, 1995

48

Cubic SiC formation on the C-face of 6H–SiC (0 0 0 1) substrates

Remigijus Vasiliauskas, Sandrine Juillaguet, Mikael Syväjärvi, Rositza Yakimova

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 616 KB

english, 2012

49

Combined effects of Ga, N, and Al codoping in solution grown 3CâSiC

Sun, J. W., Zoulis, G., Lorenzzi, J. C., Jegenyes, N., Peyre, H., Juillaguet, S., Souliere, V., Milesi, F., Ferro, G., Camassel, J.

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 1.07 MB

english, 2010

50

Characterization of a 3C-SiC Single Domain Grown on 6H-SiC(0001) by a Vapor−Liquid−Solid Mechanism

Soueidan, Maher, Ferro, Gabriel, Nsouli, Bilal, Roumie, Mohamad, Polychroniadis, Efstathios, Kazan, Michel, Juillaguet, Sandrine, Chaussende, Didier, Habka, Nada, Stoemenos, John, Camassel, Jean, Mont

Journal:

Crystal Growth & Design

Year:

2006

Language:

english

File:

PDF, 311 KB

english, 2006